| 发明名称 |
Patterning method and field effect transistors |
| 摘要 |
A patterning method with a filling material with a T-shaped cross section is used as a mask during patterning to produce structures having sublithographic dimensions, such as a double-fin field effect transistor.
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| 申请公布号 |
US7767100(B2) |
申请公布日期 |
2010.08.03 |
| 申请号 |
US20040575916 |
申请日期 |
2004.09.28 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
FEHLHABER RODGER;TEWS HELMUT |
| 分类号 |
C25F3/00;H01L21/033;H01L21/302;H01L21/308;H01L21/336;H01L21/461;H01L29/423;H01L29/786 |
主分类号 |
C25F3/00 |
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