发明名称 Semiconductor device
摘要 A semiconductor device includes a gate electrode GE electrically connected to a gate portion which is made of a polysilicon film provided in the inside of a plurality of grooves formed in a striped form along the direction of T of a chip region CA wherein the gate electrode GE is formed as a film at the same layer level as a source electrode SE electrically connected to a source region formed between adjacent stripe-shaped grooves and the gate electrode GE is constituted of a gate electrode portion G1 formed along a periphery of the chip region CA and a gate finger portion G2 arranged so that the chip region CA is divided into halves along the direction of X. The source electrode SE is constituted of an upper portion and a lower portion, both relative to the gate finger portion G2, and the gate electrode GE and the source electrode SE are connected to a lead frame via a bump electrode.
申请公布号 US7768065(B2) 申请公布日期 2010.08.03
申请号 US20070944343 申请日期 2007.11.21
申请人 RENESAS TECHNOLOGY CORP. 发明人 SHIRAI NOBUYUKI;MATSUURA NOBUYOSHI
分类号 H01L29/417;H01L29/76;H01L21/336;H01L21/60;H01L23/482;H01L23/495;H01L23/544;H01L29/78 主分类号 H01L29/417
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