发明名称 |
Method for manufacturing zinc oxide nanowires and device having the same |
摘要 |
A method for manufacturing ZnO nanowires with a small diameter and increased length and a device comprising the same. The manufacturing method includes: forming a ZnO seed layer containing a hydroxyl group on a substrate; and growing ZnO nanowires on the ZnO seed layer containing the hydroxyl group. Preferably, the ZnO seed layer is a thin ZnO seed layer containing more than 50% of the hydroxyl group.
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申请公布号 |
US7767140(B2) |
申请公布日期 |
2010.08.03 |
申请号 |
US20060485097 |
申请日期 |
2006.07.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
MIN YO-SEP;BAE EUN-JU;PARK WAN-JUN |
分类号 |
C22C18/00 |
主分类号 |
C22C18/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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