发明名称 Method for manufacturing zinc oxide nanowires and device having the same
摘要 A method for manufacturing ZnO nanowires with a small diameter and increased length and a device comprising the same. The manufacturing method includes: forming a ZnO seed layer containing a hydroxyl group on a substrate; and growing ZnO nanowires on the ZnO seed layer containing the hydroxyl group. Preferably, the ZnO seed layer is a thin ZnO seed layer containing more than 50% of the hydroxyl group.
申请公布号 US7767140(B2) 申请公布日期 2010.08.03
申请号 US20060485097 申请日期 2006.07.12
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 MIN YO-SEP;BAE EUN-JU;PARK WAN-JUN
分类号 C22C18/00 主分类号 C22C18/00
代理机构 代理人
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