发明名称 Imager element, device and system with recessed transfer gate
摘要 An imager element, device and imaging system image sensor pixel. The image sensor pixel includes a collection region, a floating diffusion region, and a transfer transistor having a recessed gate. The recessed gate is configured to couple the collection region to the floating diffusion region so that collected charge is transferred during activation. The recessed gate has an effective gate length greater than a physical gate length.
申请公布号 US7768047(B2) 申请公布日期 2010.08.03
申请号 US20070746730 申请日期 2007.05.10
申请人 MICRON TECHNOLOGY, INC. 发明人 MAURITZSON RICHARD A.;PATRICK INNA
分类号 H01L31/062;H01L31/113 主分类号 H01L31/062
代理机构 代理人
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