发明名称 |
Flash memory device with write driver and bit line detecting driving circuits |
摘要 |
A flash memory device and a method of programming a flash memory device include selecting bit lines connected to program cells of multiple memory cells coupled to a selected word line. The selected bit lines are driven to a bit line program voltage through a write driver circuit connected to first ends of the selected bit lines. The selected bit lines are also driven to the bit line program voltage through a bit line detecting/driving circuit connected to second ends of the selected bit lines. The bit line detecting/driving circuit activates the selected bit lines synchronously with voltage variations of the selected bit lines.
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申请公布号 |
US7768837(B2) |
申请公布日期 |
2010.08.03 |
申请号 |
US20070871371 |
申请日期 |
2007.10.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI JONG-IN;LEE DONG-WOO |
分类号 |
G11C16/06 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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