发明名称 |
Method for patterning a magnetoresistive sensor |
摘要 |
A method for constructing a magnetoresistive sensor using an etch mask that is resistant to the material removal process used to define the sensor width and stripe height. The method may include the use of a Ta etch mask formed under a photoresist mask, and the use of an ion milling process to define the sensor. The etch mask remains substantially intact after performing the ion milling and therefore is readily removed by a later CMP process. The etch mask layer is also very resistant to high temperatures such as those used in a desired atomic layer deposition of alumina, which is used to deposit conformal layers of alumina around the sensor.
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申请公布号 |
US7765676(B2) |
申请公布日期 |
2010.08.03 |
申请号 |
US20040993499 |
申请日期 |
2004.11.18 |
申请人 |
HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V. |
发明人 |
CYRILLE MARIE-CLAIRE;DOBISZ ELIZABETH ANN;JAYASEKARA WIPUL PEMSIRI;LI JUI-LUNG |
分类号 |
G11B5/187;B44C1/22 |
主分类号 |
G11B5/187 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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