发明名称 Thin film transistor array panel and method for manufacturing the same
摘要 The invention provides a thin film transistor (TFT) array panel that includes an insulating substrate; a gate line formed on the insulating substrate and having a first layer of an Al containing metal, a second layer of a Cu containing metal that is thicker than the first layer, and a gate electrode; a gate insulating layer arranged on the gate line; a semiconductor arranged on the gate insulating layer; a data line having a source electrode and arranged on the gate insulating layer and the semiconductor; a drain electrode arranged on the gate insulating layer and the semiconductor and facing the source electrode; a passivation layer having a contact hole and arranged on the data line and the drain electrode; and a pixel electrode arranged on the passivation layer and coupled with the drain electrode through the contact hole.
申请公布号 US7767478(B2) 申请公布日期 2010.08.03
申请号 US20080031121 申请日期 2008.02.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE JE-HUN;BAE YANG-HO;CHO BEOM-SEOK;JEONG CHANG-OH
分类号 H01L21/00 主分类号 H01L21/00
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