发明名称 |
Thin film transistor array panel and method for manufacturing the same |
摘要 |
The invention provides a thin film transistor (TFT) array panel that includes an insulating substrate; a gate line formed on the insulating substrate and having a first layer of an Al containing metal, a second layer of a Cu containing metal that is thicker than the first layer, and a gate electrode; a gate insulating layer arranged on the gate line; a semiconductor arranged on the gate insulating layer; a data line having a source electrode and arranged on the gate insulating layer and the semiconductor; a drain electrode arranged on the gate insulating layer and the semiconductor and facing the source electrode; a passivation layer having a contact hole and arranged on the data line and the drain electrode; and a pixel electrode arranged on the passivation layer and coupled with the drain electrode through the contact hole. |
申请公布号 |
US7767478(B2) |
申请公布日期 |
2010.08.03 |
申请号 |
US20080031121 |
申请日期 |
2008.02.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JE-HUN;BAE YANG-HO;CHO BEOM-SEOK;JEONG CHANG-OH |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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