发明名称 Wafer level package having floated metal line and method thereof
摘要 A method of forming a wire structure connecting to a bonding pad of a semiconductor chip includes depositing a passivation layer on an active surface of the semiconductor chip, depositing a seed metal layer on the bonding pad and the passivation layer, depositing a metal layer on the seed metal layer, etching selected portions of the seed metal layer, leaving unetched a first area, overlapping the bonding pad and a second area overlapping a connection pad, wherein the wire structure is formed by the metal layer being electrically connected to the bonding pad and the connection pad, but floating from the passivation layer, and depositing an insulting layer on the wire structure.
申请公布号 US7767576(B2) 申请公布日期 2010.08.03
申请号 US20060556931 申请日期 2006.11.06
申请人 SAMSUNG ELECTRONICS CO., LTD 发明人 CHUNG HYUN-SOO;BAEK SEUNG-DUK;CHOI JU-IL;LEE DONG-HO
分类号 H01L21/4763 主分类号 H01L21/4763
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