| 摘要 |
A semiconductor imaging device having a plurality of pixels arranged in a matrix-like pattern, each of the pixels including a first photoelectric conversion unit, a second photoelectric conversion unit, a third photoelectric conversion unit and a forth photoelectric conversion unit for converting received light into signal charge; a first signal voltage conversion unit and a second voltage conversion unit for converting the signal charge into voltage; a first transistor for controlling the signal charge to be transferred from the first photoelectric conversion unit, the second photoelectric conversion unit, the third photoelectric conversion unit and the forth photoelectric conversion unit to the first signal voltage conversion unit and the second voltage conversion unit; and a signal voltage read-out unit having second, third and forth transistors.
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