| 发明名称 |
Semiconductor device with spacer having batch and non-batch layers |
| 摘要 |
A semiconductor device including a gate stack located over a substrate and a spacer located over the substrate and adjacent the gate stack. The spacer includes a plurality of layers, wherein at least one of the plurality of layers is a batch layer and at least one of the plurality of layers is a non-batch layer.
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| 申请公布号 |
US7767590(B2) |
申请公布日期 |
2010.08.03 |
| 申请号 |
US20060458515 |
申请日期 |
2006.07.19 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN YEN MING;WU LIN JUN |
| 分类号 |
H01L21/469;H01L21/31;H01L21/336;H01L21/8242;H01L29/51;H01L29/78 |
主分类号 |
H01L21/469 |
| 代理机构 |
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