发明名称 Method for manufacturing a semiconductor device
摘要 When a conductive layer is formed, a first liquid composition containing a conductive material is applied on an outer side of a pattern that is desired to be formed (corresponding to a contour or an edge portion of a pattern), and a first conductive layer (insulating layer) having a frame-shape is formed. A second liquid composition containing a conductive material is applied so as to fill a space inside the first conductive layer having a frame-shape, whereby a second conductive layer is formed. The first conductive layer and the second conductive layer are formed so as to be in contact with each other, and the first conductive layer is formed so as to surround the second conductive layer. Therefore, the first conductive layer and the second conductive layer can be used as one continuous conductive layer.
申请公布号 US7768617(B2) 申请公布日期 2010.08.03
申请号 US20070823095 申请日期 2007.06.26
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;SHOJI HIRONOBU;KAWAMATA IKUKO
分类号 G02F1/1343;B05D1/32;B05D5/00;B05D7/22 主分类号 G02F1/1343
代理机构 代理人
主权项
地址