发明名称 Voltage tolerant floating N-well circuit
摘要 Methods and apparatuses are presented for voltage tolerant floating N-well circuits. An apparatus for mitigating leakage currents caused by input voltages is presented which includes a first transistor having a source coupled to a positive voltage supply, and a drain coupled to a floating node. The apparatus may further include a controllable pull-down path coupled to a negative voltage supply and the first transistor, wherein the controllable pull-down path is configured to turn on the first transistor and pull-up the floating node during a first state. The apparatus may further include a second transistor having a source coupled to a gate of the first transistor, and drain coupled to the floating node, wherein the second transistor is configured to place the floating node at a floating potential during a second state.
申请公布号 US7768299(B2) 申请公布日期 2010.08.03
申请号 US20070832128 申请日期 2007.08.01
申请人 QUALCOMM, INCORPORATED 发明人 GUPTA ABHEEK;SRINIVAS VAISHNAV;MOHAN VIVEK
分类号 H03K19/0175 主分类号 H03K19/0175
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