| 摘要 |
A memory device having memory cells fabricated in a substrate well is described. The memory device includes control circuitry to perform an erase operation on the memory cells and a voltage bias circuit to bias the substrate well to a positive voltage level during an erase verification operation of memory cells. The voltage bias circuit controls a discharge level of the substrate well following the erase operation to prevent the substrate well from fully discharging lower than the positive voltage level.
|
