发明名称 |
Semiconductor device made by the method of producing hybrid orientnation (100) strained silicon with (110) silicon |
摘要 |
There is provided a method of manufacturing a semiconductor device. In one aspect, the method includes providing a strained silicon layer having a crystal orientation located over a semiconductor substrate having a different crystal orientation. A mask is placed over a portion of the strained silicon layer to leave an exposed portion of the strained silicon layer. The exposed portion of the strained silicon layer is amorphized and re-crystallized to a crystal structure having an orientation the same as the semiconductor substrate.
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申请公布号 |
US7767510(B2) |
申请公布日期 |
2010.08.03 |
申请号 |
US20070760822 |
申请日期 |
2007.06.11 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
WISE RICK L.;PINTO ANGELO |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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