发明名称 |
Semiconductor device having an insulated gate bipolar transistor and a free wheel diode |
摘要 |
A p-type collector region of an IGBT and an n-type cathode region of a free wheel diode are alternately formed in a second main surface of a semiconductor substrate. A back electrode is formed on the second main surface so as to be in contact with both of the p-type collector region and the n-type cathode region, and has a titanium layer, a nickel layer and a gold layer that are successively stacked from the side of the second main surface. A semiconductor device capable of obtaining a satisfactory ON voltage in any of conduction of an insulated gate field effect transistor and conduction of the free wheel diode as well as a manufacturing method thereof can thus be obtained.
|
申请公布号 |
US7768101(B2) |
申请公布日期 |
2010.08.03 |
申请号 |
US20070684772 |
申请日期 |
2007.03.12 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
SUZUKI KENJI;TAKAHASHI HIDEKI;TOMOMATSU YOSHIFUMI |
分类号 |
H01L27/082;H01L27/102;H01L29/70;H01L31/11 |
主分类号 |
H01L27/082 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|