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发明名称
Method of dry etching oxide semiconductor film
摘要
Provided is a dry etching method for an oxide semiconductor film containing at least In, Ga, and Zn, which includes etching an oxide semiconductor film in a gas atmosphere containing a halogen-based gas.
申请公布号
US7767106(B2)
申请公布日期
2010.08.03
申请号
US20070775561
申请日期
2007.07.10
申请人
CANON KABUSHIKI KAISHA
发明人
CHANG CHIENLIU
分类号
B44C1/22
主分类号
B44C1/22
代理机构
代理人
主权项
地址
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