发明名称 |
Drain extended MOS transistor with increased breakdown voltage |
摘要 |
A semiconductor topography and a method for forming a drain extended metal oxide semiconductor (DEMOS) transistor is provided. The semiconductor topography includes at least a portion of an extended drain contact region formed within a well region and a plurality of dielectrically spaced extension regions interposed between the well region and a channel region underlying a gate structure of the topography. The channel region of a first conductivity type and the well region of a second conductivity type opposite of the first conductivity type. In addition, the plurality of dielectrically spaced extension regions and the extended drain contact region are of the second conductivity type. Each of the plurality of dielectrically spaced extension regions has a lower net concentration of electrically active impurities than the well region. Moreover, the extended drain contact region has a greater net concentration of electrically active impurities than the well region.
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申请公布号 |
US7768068(B1) |
申请公布日期 |
2010.08.03 |
申请号 |
US20070758451 |
申请日期 |
2007.06.05 |
申请人 |
CYPRESS SEMICONDUCTOR CORPORATION |
发明人 |
JANG KEVIN;PHAN BILL;PUCHNER HELMUT |
分类号 |
H01L29/735 |
主分类号 |
H01L29/735 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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