| 摘要 |
PURPOSE: A semiconductor memory device is provided to reduce the number of a pad by selectively using voltage supplied from the outside according to an operation speed. CONSTITUTION: A clock cycle detection unit(200) enables a detection signal at a period of a clock signal higher than a predetermined period. A voltage selection unit(300) selectively outputs a first and second voltages in response to a detection signal. A first internal circuit(400) receives a first voltage. A second internal circuit(500) receives a selection voltage. The first voltage and second voltages have the same voltage level. The first voltage and second voltages are outputted from different power sources. |
