发明名称 Feedback structure for an SRAM cell
摘要 Embodiments of the present disclosure provide a feedback structure, a method of constructing a feedback structure and an integrated circuit employing the feedback structure. In one embodiment, the feedback structure is for use with an integrated circuit and includes a local interconnect configured to electrically connect an output of a CMOS inverter to another circuit in the integrated circuit. Additionally, the feedback structure also includes an interconnect extension to the local interconnect configured to proximately extend along a gate structure of the CMOS inverter to provide a reactive coupling between the output and the gate structure.
申请公布号 US7768820(B2) 申请公布日期 2010.08.03
申请号 US20080969589 申请日期 2008.01.04
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 HOUSTON THEODORE W.;TIGELAAR HOWARD L.
分类号 G11C11/00 主分类号 G11C11/00
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