发明名称 |
MIM capacitor integrated into the damascene structure and method of making thereof |
摘要 |
This invention provides for the integration of metal-insulator-metal (MIM) capacitors with the damascene interconnect structure and process. The method includes forming a damascene interconnect structure and a MIM capacitor damascene structure wherein a diffusion barrier material forms the capacitor electrodes. The method includes forming a MIM capacitor damascene structure through an interlevel dielectric layer and terminating on a diffusion barrier material instead of a conventional dielectric etch stop layer. In alternative embodiments, the integrated damascene MIM capacitor makes up part of semiconductor device such as DRAM memory, CMOS, or a high frequency device.
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申请公布号 |
US7768099(B2) |
申请公布日期 |
2010.08.03 |
申请号 |
US20060525232 |
申请日期 |
2006.09.21 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
OATES ANTHONY;DIAZ CARLOS H. |
分类号 |
H01L29/00 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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