发明名称 Method of manufacturing semiconductor device
摘要 A method of manufacturing a semiconductor device, includes forming a sacrifice film on an etching target film, forming an etching mask on the sacrifice film, etching the etching target film using the etching mask as a mask, removing the sacrifice film to allow the etching mask to adhere to the etching target film, and removing the etching mask.
申请公布号 US7767582(B2) 申请公布日期 2010.08.03
申请号 US20060525179 申请日期 2006.09.22
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NISHIYAMA NOBUYASU;TOMIOKA KAZUHIRO;OHIWA TOKUHISA
分类号 H01L21/311 主分类号 H01L21/311
代理机构 代理人
主权项
地址