发明名称 Field effect transistor
摘要 A field effect transistor is provided. The field effect transistor includes a channel region, electrically conductive channel connection regions, and a control region. The electrically conductive channel connection regions adjoin the channel region along with a transistor dielectric. The control region is separated from the channel region by the transistor dielectric. In addition, the control region may comprise a monocrystalline material.
申请公布号 US7767518(B2) 申请公布日期 2010.08.03
申请号 US20080266876 申请日期 2008.11.07
申请人 INFINEON TECHNOLOGIES AG 发明人 TEWS HELMUT
分类号 H01L21/8242;H01L27/108 主分类号 H01L21/8242
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