METHOD OF MANUFACTURING NITRIDE-BASED SEMICONDUCTOR OPTICAL DEVICE

摘要

PURPOSE: A method for manufacturing a nitride semiconductor optical device is provided to improve non-uniformity of an indium composition about the thickness direction of a well layer by reducing a piezo electric field in the well layer. CONSTITUTION: An InGaN thin layer(24a,26a) is grown by supplying gallium materials and indium materials to a growth crucible as group III materials in a first period(P1) of the well layer growth. The gallium material is not supplied and the indium material is supplied in a second period(P2). The second period is continuous with the first period. The first period is a time(t3-t4) and a time(t5-t6). In the time(t3-t4), an InGaN thin layer(24a) is grown and an InGaN thin layer is grown in the time(t5-t6). The second period is a time(t4-t5). A well layer(25a) of an active layer(21) is comprised of a plurality of InGaN thin layers.