| 摘要 |
<p>This invention provides a process for producing a thin-film transistor comprising a channel layer formed of microcrystalline silicon at low cost. An intrinsic microcrystalline silicon layer (404) with a thin-film transistor (400) can be formed as follows. After the formation of a gate insulating layer (103), the surface of the gate insulating layer (103) is treated with plasma by allowing hydrogen to flow for a predetermined period of time. Subsequently, during the plasma treatment, a starting material gas is introduced to form an intrinsic microcrystalline silicon layer (404) formed of an intrinsic microcrystalline silicon on the gate insulating layer (103). The microcrystalline silicon is formed in such a manner that silicon is activated in the sea of hydrogen and is aggregated. Accordingly, in the process, the surface of the gate insulating layer (103) is filled with hydrogen for activation, and, in this state, silicon is introduced.</p> |
