| 摘要 |
PURPOSE: The semiconductor laser and semiconductor laser device prepare the electric current restriction layer in the semiconductor layer. The third semiconductor layer is formed on the area coping with among the upper side of the second semiconductor layer with the current injecting area of the active layer. By forming electrode on the domain of the contact area of the second semiconductor layer and electrode is a lot and the serial resistance can be reduced. CONSTITUTION: The semiconductor layer, the active layer(30), and the second semiconductor layer and the third semiconductor layer are successively laminated in substrate. The semiconductor layer(20) comprises the electric current restriction layer restricting the current injecting area of the active layer. The third semiconductor layer is formed among the upper side of the second semiconductor layer in the area corresponding to the current injecting area of the active layer.
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