| 摘要 |
PURPOSE: A flash memory device is provided to reduce the area of a device by forming two memory blocks sharing one source select transistor unit. CONSTITUTION: First and second memory blocks(100,200) are serially connected with a plurality of memory cells and drain selection transistors. A common source switching unit(300) is commonly connected the first and second memory block and a common source line. The common source switching unit comprises a source selection transistor. A source select transistor is commonly connected to the outmost memory cell of a plurality of memory cell which is included in the first and second memory block with the common source line. The common source switching unit connects the common source line and the first and second memory block while one is selected from the first and second memory block.
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