| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory cell capable of improving reliability compared to a conventional technique: and to provide a nonvolatile semiconductor memory device. <P>SOLUTION: The nonvolatile semiconductor memory cell includes a plurality of MOS transistor formed on a semiconductor substrate, and has a select gate for selecting the memory cell and a control gate for controlling the contents of storage. The nonvolatile semiconductor memory cell has a plurality of floating gate type transistors arranged in parallel connection to each other and controlled by a plurality of independent control gates, respectively, and a selecting transistor connected in series to the plurality of floating gate type transistors and connected to the select gate, wherein the plurality of floating gate type transistors and the selecting transistor are linearly arranged on the semiconductor substrate, and drains of the plurality of floating gate type transistors are each connected by a linear metal wiring. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
