| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing apparatus of a silicon carbide single crystal, which can effectively suppress the deposition of a polycrystal on a seed crystal, and a manufacturing method of a silicon carbide single crystal. SOLUTION: A guide member 60 is provided which extends from a seed crystal 10 to a raw material for sublimation 20, and guides a raw gas made by sublimation of the raw material for sublimation 20 to the seed crystal 10 side. In a graphite crucible 50, a first vacancy is formed between the guide member 60 and the seed crystal 10, and a second vacancy is formed below the first vacancy and between the guide member 60 and the inner wall 32 of the graphite crucible 50. The raw gas generated by the sublimation of the raw material for sublimation 20 is guided to the seed crystal side 1, passes from the first vacancy to a vacancy of the inner wall 32 side of the crucible 50, thereafter, descends along the outside of the guide member 60, passes through the second vacancy, and again circulates so as to ascend along the inside of the guide member 60, thereby suppressing residence of the raw gas in the vacancy and suppressing the deposition of a polycrystal on the vacancy side. COPYRIGHT: (C)2010,JPO&INPIT
|
