发明名称 |
SUSPENDED MONO-CRYSTALLINE STRUCTURE AND METHOD OF FABRICATION FROM A HETEROEPITAXIAL LAYER |
摘要 |
Methods of fabricating a suspended mono-crystalline structure use annealing to induce surface migration and cause a surface transformation to produce the suspended mono-crystalline structure above a cavity from a heteroepitaxial layer provided on a crystalline substrate. The methods include forming a three dimensional (3-D) structure in the heteroepitaxial layer where the 3-D structure includes high aspect ratio elements. The 3-D structure is annealed at a temperature below a melting point of the heteroepitaxial layer. The suspended mono-crystalline structure may be a portion of a semiconductor-on-nothing (SON) substrate.
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申请公布号 |
US2010187572(A1) |
申请公布日期 |
2010.07.29 |
申请号 |
US20090360079 |
申请日期 |
2009.01.26 |
申请人 |
CHO HANS S;KAMINS THEODORE I |
发明人 |
CHO HANS S.;KAMINS THEODORE I. |
分类号 |
H01L29/267;H01L21/20 |
主分类号 |
H01L29/267 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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