METHOD FOR GROWING SINGLE CRYSTAL IMPROVED IN TAIL-PROCESS AND GROWER FOR THE SAME

摘要

PURPOSE: A method for growing a mono-crystalline with an improved tail process and an apparatus for the same are provided to prevent a pop-out phenomenon due to a difference between a mono-crystalline growth speed and a growth rate by preventing cooling power from being reduced in a tail process. CONSTITUTION: An external crucible(101) surrounds and supports a quartz crucible(100). A heater(102) heats the quartz crucible. A heat shield(103) is installed between a mono-crystalline ingot(C) and the quartz crucible to surround the mono-crystalline ingot. A lifting unit(105) elevates a seed cable(1). A lift controlling system controls the lift state of the crucible in order to maintain a constant melt gap(G) in a tail process.