| 发明名称 |
GROUP III NITRIDE SUBSTRATE WITH EPITAXIAL LAYER, AND SEMICONDUCTOR DEVICE USING THE SAME |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor substrate having a stable surface. <P>SOLUTION: The group III nitride semiconductor substrate 10 with an epitaxial layer includes a group III nitride substrate and an epitaxial layer. The number of C atoms per 1 cm<SP>3</SP>in an interface between the group III nitride substrate and the epitaxial layer is ≥2×10<SP>16</SP>and ≤5×10<SP>17</SP>, and the number of atoms of a p-type metal element per 1 cm<SP>3</SP>in the interface is ≥2×10<SP>16</SP>and ≤1×10<SP>17</SP>. <P>COPYRIGHT: (C)2010,JPO&INPIT |
| 申请公布号 |
JP2010166014(A) |
申请公布日期 |
2010.07.29 |
| 申请号 |
JP20090101928 |
申请日期 |
2009.04.20 |
| 申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
ISHIBASHI KEIJI |
| 分类号 |
H01L21/3065;H01L21/205;H01L21/338;H01L29/778;H01L29/812;H01L33/32 |
主分类号 |
H01L21/3065 |
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