| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-frequency semiconductor circuit device in which a leak of a high-frequency signal to a low resistivity layer such as an epitaxial layer having a lower resistivity compared to a silicon semiconductor substrate is controlled. Ž<P>SOLUTION: An epitaxial layer 3 is formed on the surface of the semiconductor substrate 1, and a wiring 5 is formed thereon intervened by an oxide film 4. On the rear surface of the semiconductor substrate 1, an earth ground conductor 2 is formed. On the epitaxial layer 3, a conductive plug 6 electrically connected to the semiconductor substrate 1 is formed. On the oxide film 4, a contact 7 electrically connecting the wiring 5 and the conductive plug 6 is formed. The wiring 5 is electrically connected to the earth ground conductor 2 intervened by the contact 7, the conductive plug 6 and the semiconductor substrate 1. A trench 8 is formed on the epitaxial layer 3 so as to surround the conductive plug 6 from the circumferential direction. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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