| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing solid-state imaging devices for readily forming modified regions, while suppressing the occurrence of cracks in semiconductor substrates. <P>SOLUTION: The method of manufacturing the solid-state imaging device 1a includes: a process for preparing a photodiode array, including the semiconductor substrate 3 that includes a front and rear surfaces 3a, 3b facing each other, and a plurality of p-type semiconductor regions 5 that are disposed side by side, on the rear surface 3b side of the semiconductor substrate 3 and each constituting a photodiode by a p-n junction with the semiconductor substrate 3; a process for disposing a wiring board 81 on the rear surface 3b of the semiconductor substrate 3; and a process for forming the modified region 50, by focusing the focusing point F at a prescribed position on the semiconductor substrate 3 to have laser beams La irradiated from the front surface 3a side after the process for disposing the wiring board 81. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
