| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory for reducing a program time. <P>SOLUTION: The nonvolatile semiconductor memory includes: a memory cell array 10 having a plurality of memory cells including electrically programmable anti-fuse elements; and a control circuit 20 for controlling the memory cell array. The control circuit 20 simultaneously applies program voltages to a plurality of selection memory cells sMC formed along one first word line WLB (first write operation). The control circuit 20 simultaneously reads electrical states of the plurality of selection memory cells sMC, and simultaneously applies the program voltages only to an unprogrammed selection memory cell sMC after executing first write operation, based on the electrical states (second write operation). <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
