发明名称 |
PARTICLE BEAM ASSISTED MODIFICATION OF THIN FILM MATERIALS |
摘要 |
<p>Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: disposing a substrate having an upper surface and a lower surface on a platen contained in a chamber; generating a plasma containing a plurality of charged particles above the upper surface of the substrate, the plasma having a cross sectional area equal to or greater than a surface area of the upper surface of the substrate; applying a first bias voltage to the substrate to attract the charged particles toward the upper surface of the substrate; introducing the charged particles to a region extending under entire upper surface of the substrate; and initiating, concurrently, a first phase transformation in the region from the amorphous phase to a crystalline phase.</p> |
申请公布号 |
KR20100086042(A) |
申请公布日期 |
2010.07.29 |
申请号 |
KR20107012827 |
申请日期 |
2008.11.13 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
ENGLAND JONATHAN GERALD;DORAI RAJESH;GODET LUDOVIC |
分类号 |
H01L21/20;H01L29/786;H01L31/042 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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