| 摘要 |
<p>PURPOSE: A method for manufacturing a nonvolatile memory device is provided to omit a crystallization process by forming a control gate using a poly silicon layer instead of an amorphous silicon layer. CONSTITUTION: A semiconductor substrate(102) has a device isolation layer(108), a tunnel insulation layer(104) and a first conductive layer(106). The device isolation layer is formed on the device isolation area. The tunnel insulation layer and the first conductive layer are formed on an active region. A dielectric layer(110) is formed on the device isolation layer and the first conductive layer. A capping layer(112) is formed with a poly silicon layer on the dielectric layer. A second conductive layer(114) is formed on the capping layer.</p> |
