| 摘要 |
<p>PURPOSE: A method of forming a floating gate is provided to perform a pre-processing so that a floating gate is formed on the surface of a gate insulating surface by small and uniform size after forming a gate insulating layer. CONSTITUTION: A gate insulating layer(102) is formed on a semiconductor substrate(100). A seed is formed on the surface of the gate insulating layer to form a polysilicon layer. A first conductive layer is formed on the top of the gate insulating layer. The second conductive film is formed on the top of the first conductive film.</p> |
