| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device and a method of manufacturing the same, wherein while interconnect resistance of each of a cell source line, a cell well line, and a power supply line is held low, hydrogen in a forming gas-annealing process can be supplied to a memory cell. SOLUTION: The semiconductor memory device includes: a semiconductor substrate 11; a memory cell array MCA formed on the semiconductor substrate 11 and including a plurality of memory cells MC capable of electrically storing data; a sense amplifier S/A for detecting data stored in a memory cell; a source driver CSD electrically connected to a source side of the memory cell; a first interconnect CSL 3 for electrically connecting the source of the memory cell to the cell source driver; and a second interconnect VSSL3 formed in the same interconnect layer where the first interconnect is formed, insulated from the first interconnect, and electrically connected to the sense amplifier, wherein the first and second interconnects have a plurality of through holes H provided at predetermined intervals. COPYRIGHT: (C)2010,JPO&INPIT
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