| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having an internal power source voltage generation circuit for stably generating the internal power source voltage. Ž<P>SOLUTION: The semiconductor is provided with active internal voltage step-down circuits 242, 244 which are activated by responding to an activation of activation control signals corresponding to internal power source voltage lines 245a, 245b respectively, to generate internal power source voltage in the corresponding internal power source lines. A non-stop internal voltage step-down circuit is provided between these internal power source lines, for generating current of the internal power source voltage in the internal power source lines in an always operating state. Loads of the active internal voltage step-down circuits are reduced, and the internal power source voltage can be stably generated in the internal power source lines. Also during standby, the internal power source lines can be stably maintained at a predetermined voltage level with less current consumption by the non-stop internal voltage step-down circuits. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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