发明名称 |
Optical storage medium comprising a mask layer with a super resolution near field structure |
摘要 |
The optical storage medium according to the invention uses a mask layer as a super resolution near field structure, which comprises a doped semiconductor material. The semiconductor material is n-doped particularly such that the reflectivity of the semiconductor material is increased, when irradiated with a laser beam. As a semiconductor material advantageously an indium alloy and as a doping material selenium or tellurium can be used. For the manufacturing of a respective optical storage medium a sputtering method for depositing the doped semiconductor material as the mask layer can be used, wherein the dopant is included already in the semiconductor sputtering target.
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申请公布号 |
US2010189950(A1) |
申请公布日期 |
2010.07.29 |
申请号 |
US20070311716 |
申请日期 |
2007.10.11 |
申请人 |
FERY CHRISTOPHE;VON RIEWET LARISA;PILARD GAEL;KNAPPMANN STEPHAN |
发明人 |
FERY CHRISTOPHE;VON RIEWET LARISA;PILARD GAEL;KNAPPMANN STEPHAN |
分类号 |
G11B7/24;C23C14/34;G11B7/257;G11B7/2578 |
主分类号 |
G11B7/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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