发明名称 SELECTIVELY DOPED SEMI-CONDUCTORS AND METHODS OF MAKING THE SAME
摘要 The present invention is generally directed to methods of selectively doping a substrate and the resulting selectively doped substrates. The methods include doping an epilayer of a substrate with the selected doping material to adjust the conductivity of either the epilayers grown over a substrate or the substrate itself. The methods utilize lithography to control the location of the doped regions on the substrate. The process steps can be repeated to form a cyclic method of selectively doping different areas of the substrate with the same or different doping materials to further adjust the properties of the resulting substrate.
申请公布号 US2010187545(A1) 申请公布日期 2010.07.29
申请号 US20070442953 申请日期 2007.11.13
申请人 UNIVERSITY OF SOUTH CAROLINA 发明人 KHAN ASIF;ADIVARAHAN VINOD
分类号 H01L33/02;B32B3/10;H01L21/20;H01L21/22 主分类号 H01L33/02
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