发明名称 |
SELECTIVELY DOPED SEMI-CONDUCTORS AND METHODS OF MAKING THE SAME |
摘要 |
The present invention is generally directed to methods of selectively doping a substrate and the resulting selectively doped substrates. The methods include doping an epilayer of a substrate with the selected doping material to adjust the conductivity of either the epilayers grown over a substrate or the substrate itself. The methods utilize lithography to control the location of the doped regions on the substrate. The process steps can be repeated to form a cyclic method of selectively doping different areas of the substrate with the same or different doping materials to further adjust the properties of the resulting substrate. |
申请公布号 |
US2010187545(A1) |
申请公布日期 |
2010.07.29 |
申请号 |
US20070442953 |
申请日期 |
2007.11.13 |
申请人 |
UNIVERSITY OF SOUTH CAROLINA |
发明人 |
KHAN ASIF;ADIVARAHAN VINOD |
分类号 |
H01L33/02;B32B3/10;H01L21/20;H01L21/22 |
主分类号 |
H01L33/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|