发明名称 PLASMA PROCESSING APPARATUS
摘要 <p>A microwave plasma processing apparatus (10) has: a processing container (100) wherein a gas is excited by microwaves and a substrate (G) is plasma-processed; a microwave source (900) which outputs microwaves; a transmission line which transmits the microwaves outputted from the microwave source (900); a plurality of dielectric boards (305), which are arranged on the inner surface of the processing container (100) and discharge the microwaves in the processing container (100); a plurality of first coaxial tubes (610) which are adjacent to the dielectric boards (305) and transmit the microwaves to the dielectric boards (305); and a coaxial tube distributor (600) which transmits the microwaves transmitted through the transmission line, by distributing the microwaves to the first coaxial tubes (610).  The coaxial tube distributor (600) includes a second coaxial tube (620), which has an input section (In), and branched structures (B1, B2) which are connected to the first coaxial tubes (610) and have different configurations.</p>
申请公布号 WO2010084655(A1) 申请公布日期 2010.07.29
申请号 WO2009JP68748 申请日期 2009.11.02
申请人 TOHOKU UNIVERSITY;TOKYO ELECTRON LIMITED;HIRAYAMA, MASAKI;OHMI, TADAHIRO 发明人 HIRAYAMA, MASAKI;OHMI, TADAHIRO
分类号 H05H1/46;H01L21/205;H01L21/3065 主分类号 H05H1/46
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