INTERNAL VOLTAGE GENERATOR OF SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: An internal voltage generator of a semiconductor memory device is provided to reduce DC current consumption by reducing a driving current in a power down mode. CONSTITUTION: A comparison voltage generator(100) output a comparison voltage which is differentially amplified in response to the voltage of a first node which is determined according to a reference voltage and an internal power voltage. The comparison voltage generator receives a driving current through a third node. A bulk bias controller(260) selectively output different voltages as a bulk bias voltage in response to a control signal which is activated according to an operation mode. An internal voltage driving unit(200) controls a threshold voltage in response to the bulk bias voltage. The internal voltage driving unit outputs an internal power voltage to an output node in response to the comparison voltage.