发明名称 |
WET CLEAN COMPOSITIONS FOR COWP AND POROUS DIELECTRICS |
摘要 |
<p>The present invention is a formulation for wet clean removal of post etch and ash residue from a semiconductor substrate having a CoWP feature, comprising; Deionized water; Organic acid; Amine and/or quaternary ammonium hydroxide; wherein the formulation is compatible with the CoWP feature and either (a) the molar ratio of amine and/or quaternary ammonium hydroxide to organic acid provides a pH in the range of 7-14; or (b) the formulation includes a corrosion inhibitor. A method of using the formulation is also described.</p> |
申请公布号 |
SG162680(A1) |
申请公布日期 |
2010.07.29 |
申请号 |
SG20090081639 |
申请日期 |
2009.12.08 |
申请人 |
AIR PRODUCTS AND CHEMICALS, INC. |
发明人 |
WU AIPING;RAO MADHUKAR BHASKARA;BARYSCHPOLEC EUGENE C. |
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