OHMIC ELECTRODE, SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING OHMIC ELECTRODE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an ohmic electrode, a semiconductor device, a method for manufacturing an ohmic electrode, and to provide a method for manufacturing a semiconductor device for forming an ohmic electrode having a low resistance on the back face (N atomic face) of an AlGaN layer.

SOLUTION: The ohmic electrode 16 is formed on a back face 12b of an AlGaN layer 11, which has a surface 13a and a back face 12b on the opposite side of the surface 13a and whose surface 13a is (0001) face and whose conductivity type is n type. The region of the ohmic electrode 16 brought into contact with the back face 12b contains W. A method for manufacturing the ohmic electrode 16 is such that the ohmic electrode 16, whose area brought into contact with the back face 12b contains at least one of W and Mo, is formed.

COPYRIGHT: (C)2010,JPO&INPIT