| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a protection circuit which enhances an ESD surge breakdown voltage and is adaptive to microfabrication. Ž<P>SOLUTION: An ESD protection MOS transistor has a drain region 10 formed in a quadrangular shape, gate contact regions 41 formed at two vertex parts of the drain region 10, sub-contact regions 21 formed at the two remaining vertex parts of the drain region 10, gate wiring 44 formed so as to connect the gate contact regions 41 to each other and to surround the drain region 10, and source regions 30 disposed outside the gate wiring 44 formed at side parts of the drain region 10. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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