发明名称 Method of Forming a Copper Topped Interconnect Structure that has Thin and Thick Copper Traces
摘要 A copper-topped interconnect structure allows the combination of high density design areas, which have low current requirements that can be met with tightly packed thin and narrow copper traces, and low density design areas, which have high current requirements that can be met with more widely spaced thick and wide copper traces, on the same chip.
申请公布号 US2010190332(A1) 申请公布日期 2010.07.29
申请号 US20100751894 申请日期 2010.03.31
申请人 NAEM ABDALLA ALY 发明人 NAEM ABDALLA ALY
分类号 H01L21/768 主分类号 H01L21/768
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