Dielectric thin film, method of manufacturing same, and applications thereof

摘要

A dielectric thin film and a method of manufacturing the same, wherein the manufacture of a dielectric thin film having a composition represented by Ba1-xSrxTiyO3 (wherein 0≦̸x≦̸1 and 0.9≦̸y≦̸1.1) includes applying a precursor to the thin film to a substrate and performing drying, and subsequently performing calcination by raising the temperature of the dried thin film at a rate of not more than 30° C./minute, thereby forming a dielectric thin film having an average primary particle size of not less than 70 nm, for which no cracks with a continuous linear length of 1.5 μm or greater exist at the surface of the thin film.