| 摘要 |
PROBLEM TO BE SOLVED: To provide: an SiC substrate that, when a semiconductor device is manufactured, can suppress an influence on an operation of the semiconductor device; an epitaxial wafer; and a method of manufacturing the silicon carbide substrate. SOLUTION: The SiC substrate 10 includes the steps of: preparing a base substrate having a main surface and made of SiC; cleaning the main surface using a first alkaline solution; and cleaning the main surface using a second alkaline solution after the step of cleaning with the first alkaline solution. The SiC substrate has the main surface 11, and the number of residues on the main surface 11 are equal to or larger than 0.2 and smaller than 200. COPYRIGHT: (C)2010,JPO&INPIT
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