| 摘要 |
A method for manufacturing a multiple-wavelength semiconductor laser comprises: forming a first bar having an array of first semiconductor chips, wherein at least two semiconductor lasers producing light of different wavelengths are monolithically formed; forming a second bar having an array of second semiconductor chips, wherein a semiconductor laser producing light having a different wavelength from the light produced by the semiconductor lasers of the first semiconductor chips is formed; forming a third bar by locating a laser-forming surface of said first bar facing a back surface of the second bar, and joining respective first semiconductor chips in the first bar to respective second semiconductor chips in the second bar; forming scribe lines by irradiating boundaries of the first semiconductor chips and boundaries of the second semiconductor chips with laser beams, and dividing the third bar along the scribe lines into respective chips.
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